features ? low on-state resistance ? excellent gate charge x r ds(on) product ( fom ) ? fully characterized avalanche voltage and current ? specially desigened for dc-dc converter, off-line ups, automotive system, solenoid and motor control ? in compliance with eu rohs 2002/95/ec directives mechanical information ? case: to-220ab molded plastic ? terminals : solderable per mil-std-750,method 2026 marking & ordering information type marking package packing HY18N20T 18n20t to-220ab 50pcs/tube absolute maximum ratings (t c =25c unless otherwise specified ) symbol thermal characteristics company reserves the right to improve product design HY18N20T v v a a junction-to-case thermal resistance 200v / 18a n-channel enhancement mode mosfet t c =25 units parameter 200v, r ds(on) =92m w @v gs =10v, i d =10a drain-source voltage operating junction and storage temperature range w mj t c =25 maximum power dissipation derating factor v gs i dm /w 62.5 note : 1. maximum dc current limited by the package symbol continuous drain current junction-to-ambient thermal resistance r q ja pulsed drain current 1) /w 2.5 units t j, t stg 72 57 0.38 125 -55 to +175 value e as gate-source voltage v ds avalanche energy with single pulse, l=3mh parameter r q jc value 200 + 30 18 i d p d to - 220ab drain gate source 1 2 3 2 3 1 rev.1, 8 - may - 2012 page.1
symbol min. typ. max. units bv dss 200 - - v v gs(th) 1 - 3 v r ds(on) - 80 92 m w i dss - - 1 ua i gss - - 100 na qg - 26.2 - qgs - 5.8 - qgd - 11.2 - t d(on) - 12.2 - t r - 8.6 - t d(off) - 26 - t f - 9.2 - c iss - 840 - c oss - 55 - c rss - 32 - rg - 1.5 - w i s - - 18 a v sd - 0.85 1.4 v t rr - 76 - ns q rr - 265 - uc note : pulse test : pulse width Q 300us, duty cycle Q 2% source-drain diode reverse transfer capacitance - i s =18a v gs =0v reverse recovery charge max. diode forwad voltage diode forward voltage reverse recovery time static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =10a v ds =160v v gs =0v turn-on delay time v gs = + 24v v ds =0v zero gate voltage drain current total gate charge gate body leakage current v dd =100v i d =10a v gs =10v r g =3.6 w gate-drain charge dynamic v ds =100v i d =10a v gs =10v nc ns turn-on rise time turn-off delay time turn-off fall time v ds =30v v gs =0v f=1.0mh z pf input capacitance output capacitance v gs =0v i s =18a di/dt=100a/us drain-source on-state resistance gate resistance HY18N20T electrical characteristics ( t c =25, unless otherwise noted ) test condition parameter drain-source breakdown voltage gate threshold voltage gate-source charge rev.1, 8 - may - 2012 page.2
HY18N20T typical characteristics curves ( t c =25 , unless otherwise noted) 0 10 20 30 40 50 0 4 8 12 16 20 i d - drain - to - source current (a) v ds - drain - to - source voltage (v) 5.0v v gs = 10v~ 7.0v 4.0v 6.0v 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 r ds(on) - on resistance(m w ) i d - drain current (a) v gs =10 v 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain - to - source voltage (v) ciss f = 1mhz v gs = 0v crss coss 60 80 100 120 140 160 180 3 4 5 6 7 8 9 10 r ds(on) - on resistance(m w ) v gs - gate - to - source voltage (v) i d =10a fig.1 output characteristric 0 2 4 6 8 10 12 0 5 10 15 20 25 30 v gs - gate - to - source voltage (v) q g - gate charge (nc) v ds =100v i d =10a fig.2 on - resistance vs drain current fig.3 on - resistance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) - on - resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =10a fig.4 on - resistance vs junction temperature rev.1, 8 - may - 2012 page.3
HY18N20T typical characteristics curves ( t c =25 , unless otherwise noted) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 power rating t j - junction temperature ( o c) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 i s - source current (a) v sd - source - to - drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c fig.7 power derating curve fig.9 body diode forward voltage characteristic 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 175 bv dss - breakdown voltage (normalized) t j - junction temperature ( o c) i d = 250 m a fig.8 breakdown voltage vs junction temperature rev.1, 8 - may - 2012 page.4
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